IS25LQ040B-JBLE vs 25C320-I/SN

Part Number
IS25LQ040B-JBLE
25C320-I/SN
Category General Memory General Memory
Manufacturer ISSI, Integrated Silicon Solution Inc Microchip Technology
Description IC FLASH 4MBIT SPI/QUAD 8SOIC IC EEPROM 32KBIT SPI 3MHZ 8SOIC
Package -Reel® -Reel®
Series - -
Voltage - Supply 2.3V ~ 3.6V 4.5V ~ 5.5V
Operating Temperature -40°C ~ 105°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.209\", 5.30mm Width) 8-SOIC (0.154\", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC
Memory Size 4Mb (512K x 8) 32Kb (4K x 8)
Technology FLASH - NOR EEPROM
Memory Type Non-Volatile Non-Volatile
Clock Frequency 104 MHz 3 MHz
Access Time - -
Memory Format FLASH EEPROM
Write Cycle Time - Word, Page 800µs 5ms
Memory Interface SPI - Quad I/O SPI
  • 1. Is there a relationship between the capacity and speed of memory?

    The capacity and speed of memory are not directly related. The capacity refers to the amount of data that the memory can hold, while the speed determines the speed at which the memory reads and writes data. Generally speaking, faster memory such as RAM has a smaller capacity, while large-capacity storage such as HDD is relatively slow.

  • 2. What are volatile and non-volatile memory?

    Volatile memory loses data when power is off, such as RAM; non-volatile memory retains data after power is off, such as ROM and flash memory.

  • 3. What is the difference between SRAM and DRAM?

    SRAM (static RAM) does not require periodic refreshes and is faster but more expensive; DRAM (dynamic RAM) requires periodic refreshes and has a higher storage density and is suitable for main memory.

  • 4. How to extend the life of memory devices?

    Measures such as regular data backup, avoiding excessive reading and writing of memory, ensuring proper temperature control, and preventing power fluctuations can help extend the life of memory.

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