IS25WP256D-RMLE vs AS4C128M8D3B-12BCN

Part Number	IS25WP256D-RMLE	AS4C128M8D3B-12BCN
Category	General Memory	General Memory
Manufacturer	ISSI, Integrated Silicon Solution Inc	Alliance Memory, Inc.
Description	IC FLASH 256MBIT SERIAL 16SOIC	IC DRAM 1GBIT PARALLEL 78FBGA
Package	Tube	Tray
Series	-	-
Voltage - Supply	1.65V ~ 1.95V	1.425V ~ 1.575V
Operating Temperature	-40°C ~ 105°C (TA)	0°C ~ 95°C (TC)
Mounting Type	Surface Mount	Surface Mount
Package / Case	16-SOIC (0.295\", 7.50mm Width)	78-VFBGA
Supplier Device Package	16-SOIC	78-FBGA (8x10.5)
Memory Size	256Mb (32M x 8)	1Gb (128M x 8)
Technology	FLASH - NOR	SDRAM - DDR3
Memory Type	Non-Volatile	Volatile
Clock Frequency	104 MHz	800 MHz
Access Time	8 ns	20 ns
Memory Format	FLASH	DRAM
Write Cycle Time - Word, Page	800µs	15ns
Memory Interface	Serial	Parallel

1. What is the difference between RAM and ROM?

RAM is volatile storage and is used to temporarily store data; while ROM is non-volatile storage, which can still save data after the device is turned off, and is usually used to store unchangeable data such as system startup programs.
2. What is embedded memory?

Embedded memory is a memory integrated into an electronic system for real-time data processing and program execution of the device. It is commonly found in microcontrollers, mobile devices, and embedded systems.
3. What is virtual memory and how does it work?

Virtual memory is a technology that uses hard disk space as memory, allowing the system to use hard disk space to expand memory when physical RAM is insufficient, improving the system's multitasking capabilities.
4. What is High Bandwidth Memory (HBM) and what are its advantages?

HBM is a high-bandwidth, low-latency memory technology commonly used in graphics cards and AI accelerators that can handle a large number of parallel computing tasks. HBM's stacked architecture makes it take up less space and more efficient, making it an ideal choice for big data and high-performance computing applications.