JANTX2N6990 vs JANTX2N3811

Part Number
JANTX2N6990
JANTX2N3811
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
Manufacturer Microchip Technology Microsemi Corporation
Description TRANS 4NPN 50V 0.8A TRANS 2PNP 60V 0.05A TO78
Package Tape & Reel (TR) -Reel®
Series Military, MIL-PRF-19500/559 Military, MIL-PRF-19500/336
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Surface Mount Through Hole
Package / Case 14-Flatpack TO-78-6 Metal Can
Supplier Device Package 14-Flatpack TO-78-6
Power - Max 400mW 350mW
Transistor Type 4 NPN (Quad) 2 PNP (Dual)
Current - Collector (Ic) (Max) 800mA 50mA
Voltage - Collector Emitter Breakdown (Max) 50V 60V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 300 @ 1mA, 5V
Frequency - Transition - -
  • 1. What advantages do BJT arrays offer over single transistors?

    BJT arrays provide better matching between transistors, reduce PCB space, and improve thermal performance since all transistors share the same substrate.

  • 2. What packages are BJT arrays available in?

    Common packages include surface-mount types like SC-88, SOT-363, or TSSOP, which are compact and suitable for space-constrained designs.

  • 3. How do BJT arrays compare to MOSFET arrays?

    BJT arrays are preferred for applications requiring high current gain and faster switching, while MOSFETs are better for low-power and high-efficiency applications.

  • 4. What are key specifications to consider when selecting a BJT array?

    Important parameters include collector current (Ic), voltage rating (Vce), hFE (current gain), and thermal resistance for reliability in operation.

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