NTE99 vs UPD8831BCT-FAB-A

Part Number
NTE99
UPD8831BCT-FAB-A
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
Manufacturer NTE Electronics, Inc Renesas Electronics America Inc
Description TRANS NPN 400V 50A TO3 DISCRETE / POWER TRANSISTOR
Package Bag Bulk
Series - -
Operating Temperature -65°C ~ 200°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-204AA, TO-3 -
Supplier Device Package TO-3 -
Power - Max 250 W -
Transistor Type NPN - Darlington -
Current - Collector (Ic) (Max) 50 A -
Voltage - Collector Emitter Breakdown (Max) 400 V -
Vce Saturation (Max) @ Ib, Ic 5V @ 10A, 50A -
Current - Collector Cutoff (Max) 250µA -
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 20A, 5V -
Frequency - Transition - -
  • 1. What is a bipolar transistor?

    A bipolar transistor, or bipolar junction transistor (BJT), is an electronic device with three terminals, consisting of three semiconductors with different doping levels. It was successfully developed by William Shockley, John Bardeen and Walter Brattain of Bell Labs in 1947, marking the birth of semiconductor device technology.

  • 2. Is PNP transistor bipolar?

    PNP transistor is a bipolar transistor. PNP transistor is a bipolar transistor used in electronic circuits to amplify, switch and control current. Its name "PNP" represents the three different semiconductor regions in its structure: two positive poles (P type) and one negative pole (N type).

  • 3. Are bipolar transistors still in use?

    Bipolar transistors are still in use and play an important role in many fields. Bipolar transistors, the full name of which is bipolar junction transistor (BJT), commonly known as triode, are electronic devices with three terminals, made of three parts of semiconductors with different doping levels. Its working principle involves the flow of two carriers, electrons and holes, so it is called bipolar.

  • 4. Is BJT transistor a bipolar device?

    BJT transistor is a bipolar junction transistor (Bipolar Junction Transistor, referred to as BJT), which is a bipolar device. BJT is composed of two PN junctions, divided into PNP and NPN types, and works through two PN junctions to achieve current amplification.
    The working principle of BJT is to amplify the collector current by controlling the base current. When the base potential is higher than the emitter potential, the emitter junction is in a forward biased state, and the collector junction is in a reverse biased state. Since the majority carrier concentration in the emitter region is greater than that in the base region, most of the electrons injected into the base region pass over the collector junction and enter the collector region, forming a collector current, thereby achieving current amplification.
    BJT is widely used in electronic circuits, such as amplifiers, switches, oscillators, etc., with amplification capabilities, linear amplification characteristics and high frequency response.

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