S34ML02G104BHA013 vs W949D2DBJX5E

Part Number
S34ML02G104BHA013
W949D2DBJX5E
Category General Memory General Memory
Manufacturer Cypress Semiconductor Corp Winbond Electronics
Description IC FLASH 2GBIT PARALLEL 63BGA IC DRAM 512MBIT PARALLEL 90VFBGA
Package Tape & Reel (TR) Cut Tape (CT)
Series ML-1 -
Voltage - Supply 2.7V ~ 3.6V 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA) -25°C ~ 85°C (TC)
Mounting Type Surface Mount Surface Mount
Package / Case 63-VFBGA 90-TFBGA
Supplier Device Package 63-BGA (11x9) 90-VFBGA (8x13)
Memory Size 2Gb (128M x 16) 512Mb (16M x 32)
Technology FLASH - NAND SDRAM - Mobile LPDDR
Memory Type Non-Volatile Volatile
Clock Frequency - 200 MHz
Access Time - 5 ns
Memory Format FLASH DRAM
Write Cycle Time - Word, Page 25ns 15ns
Memory Interface Parallel Parallel
  • 1. How to measure the data read and write speed of memory?

    The read and write speed of memory is usually expressed in MB/s or GB/s, reflecting the amount of data it processes per second. The faster the speed, the higher the data transmission efficiency.

  • 2. What is ECC memory?

    ECC (error correction code) memory detects and corrects single-bit errors in stored data, improving the reliability of memory and is commonly used in servers and data centers.

  • 3. Why is the DRAM refresh rate important?

    DRAM needs to be refreshed regularly to maintain data. The refresh rate affects the power consumption and speed of the memory. The higher the refresh rate, the faster the memory responds, but it also increases power consumption.

  • 4. How to extend the life of memory devices?

    Measures such as regular data backup, avoiding excessive reading and writing of memory, ensuring proper temperature control, and preventing power fluctuations can help extend the life of memory.

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