SBR2U60S1FQ-7 vs VS-3EJH02-M3/6B

Part Number
SBR2U60S1FQ-7
VS-3EJH02-M3/6B
Category Diodes - Rectifiers - Single Diodes - Rectifiers - Single
Manufacturer Diodes Incorporated Vishay Semiconductor - Diodes Division
Description DIODE SBR 60V 2A SOD123F DIODE GEN PURP 200V 3A DO221AC
Package Tape & Reel (TR) Cut Tape (CT)
Series Automotive, AEC-Q101, SBR® FRED Pt®
Mounting Type Surface Mount Surface Mount
Package / Case SOD-123F DO-221AC, SMA Flat Leads
Supplier Device Package SOD-123F DO-221AC (SlimSMA)
Diode Type Super Barrier Standard
Current - Average Rectified (Io) 2A 3A
Voltage - Forward (Vf) (Max) @ If 510 mV @ 2 A 930 mV @ 3 A
Current - Reverse Leakage @ Vr 150 µA @ 60 V 2 µA @ 200 V
Capacitance @ Vr, F 75pF @ 10V, 1MHz -
Voltage - DC Reverse (Vr) (Max) 60 V 200 V
Speed Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - 30 ns
Operating Temperature - Junction -55°C ~ 175°C -65°C ~ 175°C
  • 1. What is a fast recovery diode?

    Fast recovery diode is a special type of rectifier diode with a short reverse recovery time, suitable for high-frequency power supplies and switch mode power supplies (SMPS) applications, reducing switching losses.

  • 2. Can a single rectifier diode be used for high-frequency applications?

    Traditional silicon rectifier diodes are not suitable for high-frequency applications because their reverse recovery time is relatively long. For high-frequency applications, fast recovery diodes or Schottky diodes are typically used to reduce switching losses and improve efficiency.

  • 3. What is the reverse recovery time of a rectifier diode?

    Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.

  • 4. How to improve the efficiency of rectifier diodes?

    The use of Schottky diodes or fast recovery diodes can reduce forward voltage drop and reverse recovery time, thereby improving the efficiency of rectifier circuits, especially in high-frequency applications.

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