SFS1001GHMNG vs SFS1006GHMNG

Part Number	SFS1001GHMNG	SFS1006GHMNG
Category	Diodes - Rectifiers - Single	Diodes - Rectifiers - Single
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation
Description	DIODE GEN PURP 50V 10A TO263AB	DIODE GEN PURP 400V 10A TO263AB
Package	Tape & Reel (TR)	-Reel®
Series	Automotive, AEC-Q101	Automotive, AEC-Q101
Mounting Type	Surface Mount	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB (D²PAK)	TO-263AB (D²PAK)
Diode Type	Standard	Standard
Current - Average Rectified (Io)	10A	10A
Voltage - Forward (Vf) (Max) @ If	975 mV @ 5 A	1.3 V @ 5 A
Current - Reverse Leakage @ Vr	1 µA @ 50 V	1 µA @ 400 V
Capacitance @ Vr, F	70pF @ 4V, 1MHz	50pF @ 4V, 1MHz
Voltage - DC Reverse (Vr) (Max)	50 V	400 V
Speed	Fast Recovery =< 500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	35 ns	35 ns
Operating Temperature - Junction	-55°C ~ 150°C	-55°C ~ 150°C

1. What is a single rectifier diode?

A single rectifier diode is an electronic component used to convert alternating current (AC) to direct current (DC), typically used in power supplies, chargers, and other circuits that require DC power.
2. What is the difference between Schottky diodes and traditional silicon rectifier diodes?

Schottky diodes have a lower forward voltage drop (typically 0.2V to 0.3V) and faster switching speed, making them suitable for high-frequency applications. However, their reverse voltage is relatively low and is typically used in circuits with lower voltages.
3. Can a single rectifier diode be used for high-frequency applications?

Traditional silicon rectifier diodes are not suitable for high-frequency applications because their reverse recovery time is relatively long. For high-frequency applications, fast recovery diodes or Schottky diodes are typically used to reduce switching losses and improve efficiency.
4. What is the reverse recovery time of a rectifier diode?

Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.