SFS1001GHMNG vs SRAS830HMNG

Part Number
SFS1001GHMNG
SRAS830HMNG
Category Diodes - Rectifiers - Single Diodes - Rectifiers - Single
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Description DIODE GEN PURP 50V 10A TO263AB DIODE SCHOTTKY 30V 8A TO263AB
Package Tape & Reel (TR) Tape & Reel (TR)
Series Automotive, AEC-Q101 Automotive, AEC-Q101
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB (D²PAK) TO-263AB (D²PAK)
Diode Type Standard Schottky
Current - Average Rectified (Io) 10A 8A
Voltage - Forward (Vf) (Max) @ If 975 mV @ 5 A 550 mV @ 8 A
Current - Reverse Leakage @ Vr 1 µA @ 50 V 100 µA @ 30 V
Capacitance @ Vr, F 70pF @ 4V, 1MHz -
Voltage - DC Reverse (Vr) (Max) 50 V 30 V
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns -
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 125°C
  • 1. What is a single rectifier diode?

    A single rectifier diode is an electronic component used to convert alternating current (AC) to direct current (DC), typically used in power supplies, chargers, and other circuits that require DC power.

  • 2. What are the common applications of a single rectifier diode?

    They are commonly used in power circuits, chargers, AC to DC converters, motor drives, circuit protection, and other electronic devices to convert AC power to DC power or protect circuits from reverse current.

  • 3. What is the difference between Schottky diodes and traditional silicon rectifier diodes?

    Schottky diodes have a lower forward voltage drop (typically 0.2V to 0.3V) and faster switching speed, making them suitable for high-frequency applications. However, their reverse voltage is relatively low and is typically used in circuits with lower voltages.

  • 4. What is the reverse recovery time of a rectifier diode?

    Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.

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