SST26VF032BA-104I/SM vs 23LCV512-I/SN

Part Number
SST26VF032BA-104I/SM
23LCV512-I/SN
Category General Memory General Memory
Manufacturer Microchip Technology Microchip Technology
Description IC FLASH 32MBIT SPI/QUAD 8SOIJ IC SRAM 512KBIT SPI/DUAL 8SOIC
Package Bulk -Reel®
Series SST26 SQI® -
Voltage - Supply 2.7V ~ 3.6V 2.5V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.209\", 5.30mm Width) 8-SOIC (0.154\", 3.90mm Width)
Supplier Device Package 8-SOIJ 8-SOIC
Memory Size 32Mb (4M x 8) 512Kb (64K x 8)
Technology FLASH SRAM - Synchronous
Memory Type Non-Volatile Volatile
Clock Frequency 104 MHz 20 MHz
Access Time - -
Memory Format FLASH SRAM
Write Cycle Time - Word, Page 1.5ms -
Memory Interface SPI - Quad I/O SPI - Dual I/O
  • 1. Is there a relationship between the capacity and speed of memory?

    The capacity and speed of memory are not directly related. The capacity refers to the amount of data that the memory can hold, while the speed determines the speed at which the memory reads and writes data. Generally speaking, faster memory such as RAM has a smaller capacity, while large-capacity storage such as HDD is relatively slow.

  • 2. What is double data rate (DDR) memory?

    DDR memory is a RAM technology that can transmit data at both the rising and falling edges of the clock signal to increase the data transmission speed. There are multiple generations of DDR, such as DDR3, DDR4, DDR5, etc., each generation has higher speed and capacity and lower power consumption.

  • 3. What is embedded memory?

    Embedded memory is a memory integrated into an electronic system for real-time data processing and program execution of the device. It is commonly found in microcontrollers, mobile devices, and embedded systems.

  • 4. Why is the DRAM refresh rate important?

    DRAM needs to be refreshed regularly to maintain data. The refresh rate affects the power consumption and speed of the memory. The higher the refresh rate, the faster the memory responds, but it also increases power consumption.

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