SST39SF010A-55-4C-NHE vs MX25U1635EZUI-10G

Part Number
SST39SF010A-55-4C-NHE
MX25U1635EZUI-10G
Category General Memory General Memory
Manufacturer Microchip Technology Macronix
Description IC FLASH 1MBIT PARALLEL 32PLCC IC FLASH 16MBIT SPI/QUAD 8USON
Package Tube Cut Tape (CT)
Series SST39 MPF™ MX25xxx35/36 - MXSMIO™
Voltage - Supply 4.5V ~ 5.5V 1.65V ~ 2V
Operating Temperature 0°C ~ 70°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount
Package / Case 32-LCC (J-Lead) 8-WDFN Exposed Pad
Supplier Device Package 32-PLCC (11.43x13.97) 8-USON (4x4)
Memory Size 1Mb (128K x 8) 16Mb (2M x 8)
Technology FLASH FLASH - NOR
Memory Type Non-Volatile Non-Volatile
Clock Frequency - 104 MHz
Access Time 55 ns -
Memory Format FLASH FLASH
Write Cycle Time - Word, Page 20µs 30µs, 3ms
Memory Interface Parallel SPI - Quad I/O
  • 1. What are the main types of memory?

    Common memory types include random access memory (RAM), read-only memory (ROM), flash memory, hard disk drive (HDD), and solid-state drive (SSD).

  • 2. Is there a relationship between the capacity and speed of memory?

    The capacity and speed of memory are not directly related. The capacity refers to the amount of data that the memory can hold, while the speed determines the speed at which the memory reads and writes data. Generally speaking, faster memory such as RAM has a smaller capacity, while large-capacity storage such as HDD is relatively slow.

  • 3. How to measure the data read and write speed of memory?

    The read and write speed of memory is usually expressed in MB/s or GB/s, reflecting the amount of data it processes per second. The faster the speed, the higher the data transmission efficiency.

  • 4. What is the difference between SRAM and DRAM?

    SRAM (static RAM) does not require periodic refreshes and is faster but more expensive; DRAM (dynamic RAM) requires periodic refreshes and has a higher storage density and is suitable for main memory.

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