STPSC8H065G-TR vs GP2D006A065C

Part Number
STPSC8H065G-TR
GP2D006A065C
Category Diodes - Rectifiers - Single Diodes - Rectifiers - Single
Manufacturer STMicroelectronics SemiQ
Description DIODE SCHOTTKY 650V 8A D2PAK DIODE SCHOTTKY 650V 6A TO252-2
Package -Reel® Cut Tape (CT)
Series - Amp+™
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D²PAK TO-252-2L (DPAK)
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Current - Average Rectified (Io) 8A 6A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A 1.65 V @ 6 A
Current - Reverse Leakage @ Vr 80 µA @ 650 V 60 µA @ 650 V
Capacitance @ Vr, F 414pF @ 0V, 1MHz 316pF @ 1V, 1MHz
Voltage - DC Reverse (Vr) (Max) 650 V 650 V
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns
Operating Temperature - Junction -40°C ~ 175°C -55°C ~ 175°C
  • 1. What is a fast recovery diode?

    Fast recovery diode is a special type of rectifier diode with a short reverse recovery time, suitable for high-frequency power supplies and switch mode power supplies (SMPS) applications, reducing switching losses.

  • 2. What is the difference between Schottky diodes and traditional silicon rectifier diodes?

    Schottky diodes have a lower forward voltage drop (typically 0.2V to 0.3V) and faster switching speed, making them suitable for high-frequency applications. However, their reverse voltage is relatively low and is typically used in circuits with lower voltages.

  • 3. Can a single rectifier diode be used for high-frequency applications?

    Traditional silicon rectifier diodes are not suitable for high-frequency applications because their reverse recovery time is relatively long. For high-frequency applications, fast recovery diodes or Schottky diodes are typically used to reduce switching losses and improve efficiency.

  • 4. What is the reverse recovery time of a rectifier diode?

    Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.

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