ULN2803ADWRG4 vs ZXTD09N50DE6TA

Part Number
ULN2803ADWRG4
ZXTD09N50DE6TA
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
Manufacturer Texas Instruments Diodes Incorporated
Description TRANS 8NPN DARL 50V 0.5A 18SOIC TRANS 2NPN 50V 1A SOT23-6
Package Tape & Reel (TR) Cut Tape (CT)
Series Automotive, AEC-Q100 -
Operating Temperature -40°C ~ 85°C (TA) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 18-SOIC (0.295\", 7.50mm Width) SOT-23-6
Supplier Device Package 18-SOIC SOT-26
Power - Max - 1.1W
Transistor Type 8 NPN Darlington 2 NPN (Dual)
Current - Collector (Ic) (Max) 500mA 1A
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500µA, 350mA 270mV @ 50mA, 1A
Current - Collector Cutoff (Max) - 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce - 200 @ 500mA, 2V
Frequency - Transition - 215MHz
  • 1. How does the thermal coupling affect BJT arrays?

    Thermal coupling ensures uniform behavior across transistors in the array, improving performance in applications like differential amplifiers.

  • 2. What packages are BJT arrays available in?

    Common packages include surface-mount types like SC-88, SOT-363, or TSSOP, which are compact and suitable for space-constrained designs.

  • 3. How do BJT arrays compare to MOSFET arrays?

    BJT arrays are preferred for applications requiring high current gain and faster switching, while MOSFETs are better for low-power and high-efficiency applications.

  • 4. What are key specifications to consider when selecting a BJT array?

    Important parameters include collector current (Ic), voltage rating (Vce), hFE (current gain), and thermal resistance for reliability in operation.

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