VSSAF5N50-M3/6B vs U2B-E3/52T

Part Number
VSSAF5N50-M3/6B
U2B-E3/52T
Category Diodes - Rectifiers - Single Diodes - Rectifiers - Single
Manufacturer Vishay Semiconductor - Diodes Division Vishay Semiconductor - Diodes Division
Description DIODE SCHOTTKY 50V 3A DO221AC DIODE GEN PURP 100V 2A DO214AA
Package Tape & Reel (TR) Bulk
Series TMBS®, SlimSMA™ -
Mounting Type Surface Mount Surface Mount
Package / Case DO-221AC, SMA Flat Leads DO-214AA, SMB
Supplier Device Package DO-221AC (SlimSMA) DO-214AA (SMB)
Diode Type Schottky Standard
Current - Average Rectified (Io) 3A (DC) 2A
Voltage - Forward (Vf) (Max) @ If 410 mV @ 2.5 A 900 mV @ 2 A
Current - Reverse Leakage @ Vr 1.4 mA @ 50 V 10 µA @ 100 V
Capacitance @ Vr, F 850pF @ 4V, 1MHz -
Voltage - DC Reverse (Vr) (Max) 50 V 100 V
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - 27 ns
Operating Temperature - Junction -40°C ~ 150°C -55°C ~ 150°C
  • 1. What is a single rectifier diode?

    A single rectifier diode is an electronic component used to convert alternating current (AC) to direct current (DC), typically used in power supplies, chargers, and other circuits that require DC power.

  • 2. What is the maximum reverse voltage (PIV) of a rectifier diode?

    The Peak Inverse Voltage (PIV) is the maximum reverse voltage that a diode can withstand. When selecting a diode, the PIV must be higher than the maximum reverse voltage in the circuit, usually twice or more the input voltage.

  • 3. What is the difference between Schottky diodes and traditional silicon rectifier diodes?

    Schottky diodes have a lower forward voltage drop (typically 0.2V to 0.3V) and faster switching speed, making them suitable for high-frequency applications. However, their reverse voltage is relatively low and is typically used in circuits with lower voltages.

  • 4. What is the reverse recovery time of a rectifier diode?

    Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.

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