ZUMTS17HTA vs BFU725F,115

Part Number
ZUMTS17HTA
BFU725F,115
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
Manufacturer Diodes Incorporated NXP USA Inc.
Description RF TRANS NPN 15V 1.3GHZ SOT323 RF TRANS NPN 2.8V 70GHZ 4DFP
Package Tape & Reel (TR) Tray
Series - -
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SOT-343F
Supplier Device Package SOT-323 4-DFP
Gain - 10dB ~ 24dB
Power - Max 330mW 136mW
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 25mA 40mA
Voltage - Collector Emitter Breakdown (Max) 15V 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA, 1V 300 @ 10mA, 2V
Frequency - Transition 1.3GHz 70GHz
Noise Figure (dB Typ @ f) 4.5dB @ 500MHz 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
  • 1. What are RF BJTs used for?

    RF BJTs are used in high-frequency applications, including amplifiers, oscillators, mixers, and RF front-end circuits in communication systems.

  • 2. How do RF BJTs differ from standard BJTs?

    RF BJTs are specifically optimized for high-frequency performance, featuring lower capacitance, faster transition times, and higher gain-bandwidth products compared to standard BJTs.

  • 3. What are the common biasing techniques for RF BJTs?

    Typical biasing methods include fixed bias, voltage-divider bias, and emitter-stabilized bias to ensure stability and proper operation at high frequencies.

  • 4. What are some popular RF BJT models?

    Commonly used RF BJTs include 2N3866, 2SC1971, BF199, and MPSH10, which are well-suited for various RF amplifier and oscillator designs.

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