2301H

Goford Semiconductor 2301H

The picture is for reference only, please refer to the product specification

  • 2301H
  • Goford Semiconductor
  • P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
  • Transistors - FETs, MOSFETs - Single
  • 2301H Datasheet
  • TO-236-3, SC-59, SOT-23-3
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 16021
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
2301H
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Goford Semiconductor
Description
P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1W (Ta)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Rds On (Max) @ Id, Vgs
125mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds
405 pF @ 10 V
Vgs (Max)
±12V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
TO-236-3, SC-59, SOT-23-3

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