G12P03D3

Goford Semiconductor G12P03D3

The picture is for reference only, please refer to the product specification

  • G12P03D3
  • Goford Semiconductor
  • P30V,RD(MAX)<20M@-10V,RD(MAX)<26
  • Transistors - FETs, MOSFETs - Single
  • G12P03D3 Datasheet
  • 8-PowerVDFN
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4557
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
G12P03D3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Goford Semiconductor
Description
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
Package
Tape & Reel (TR)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-DFN (3.15x3.05)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3W (Tc)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Rds On (Max) @ Id, Vgs
20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1253 pF @ 15 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-PowerVDFN

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