Central Semiconductor Corp 2N3417 APM
- 2N3417 APM
- Central Semiconductor Corp
- THROUGH-HOLE TRANSISTOR-SMALL SI
- Transistors - Bipolar (BJT) - Single
- 2N3417 APM Datasheet
- TO-226-3, TO-92-3 (TO-226AA)
- TO-226-3, TO-92-3 (TO-226AA)
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What is 2N3417 APM
Central Semiconductor Corp Part Number 2N3417 APM(Transistors - Bipolar (BJT) - Single), developed and manufactured by Central Semiconductor Corp, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
2N3417 APM is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
2N3417 APM Specifications
- Part Number2N3417 APM
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerCentral Semiconductor Corp
- DescriptionTHROUGH-HOLE TRANSISTOR-SMALL SI
- PackageTO-226-3, TO-92-3 (TO-226AA)
- Series-
- Operating Temperature-65°C ~ 150°C (TJ)
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Supplier Device PackageTO-92
- Power - Max1.5W
- Transistor TypeNPN
- Current - Collector (Ic) (Max)500mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Vce Saturation (Max) @ Ib, Ic300mV @ 3mA, 50mA
- Current - Collector Cutoff (Max)100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 2mA, 4.5V
Application of 2N3417 APM
2N3417 APM Datasheet
2N3417 APM Datasheet , TO-226-3, TO-92-3 (TO-226AA),-65°C ~ 150°C (TJ),Through Hole,TO-226-3, TO-92-3 (TO-226AA),TO-92,1.5W,NPN,500mA,50V,300mV @ 3mA, 50mA,100nA (ICBO),180 @ 2mA, 4.5V
2N3417 APM Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is a bipolar transistor?
A bipolar transistor, or bipolar junction transistor (BJT), is an electronic device with three terminals, consisting of three semiconductors with different doping levels. It was successfully developed by William Shockley, John Bardeen and Walter Brattain of Bell Labs in 1947, marking the birth of semiconductor device technology.
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2. Is PNP transistor bipolar?
PNP transistor is a bipolar transistor. PNP transistor is a bipolar transistor used in electronic circuits to amplify, switch and control current. Its name "PNP" represents the three different semiconductor regions in its structure: two positive poles (P type) and one negative pole (N type).
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3. What are the two types of BJT transistors?
There are two main types of BJT transistors: NPN and PNP.
NPN transistor
In an NPN transistor, current flows from the collector to the emitter. The base of an NPN transistor must be connected to a positive voltage for current to flow in. As the current flowing to the base increases, the transistor gradually turns on until the current is completely conducted from the collector to the emitter.
PNP Transistor
In a PNP transistor, the current flows from the emitter to the collector. Therefore, the base of the PNP transistor must be grounded. When the output current is small and the base is negative relative to the emitter, the transistor will turn on and a larger current will flow from the emitter to the collector. Basically, if the base and collector are negative relative to the emitter, the PNP transistor will conduct current from the emitter to the collector.
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