2SK2009TE85LF

Toshiba Semiconductor and Storage 2SK2009TE85LF

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  • 2SK2009TE85LF
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 30V 200MA SC59-3
  • Transistors - FETs, MOSFETs - Single
  • 2SK2009TE85LF Datasheet
  • TO-236-3, SC-59, SOT-23-3
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 14609
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
2SK2009TE85LF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 30V 200MA SC59-3
Package
Cut Tape (CT)
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SC-59-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
200mW (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)
Rds On (Max) @ Id, Vgs
2Ohm @ 50MA, 2.5V
Vgs(th) (Max) @ Id
1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
70 pF @ 3 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
2.5V
Package_case
TO-236-3, SC-59, SOT-23-3

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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