Toshiba Semiconductor and Storage 2SK2009TE85LF
- 2SK2009TE85LF
- Toshiba Semiconductor and Storage
- MOSFET N-CH 30V 200MA SC59-3
- Transistors - FETs, MOSFETs - Single
- 2SK2009TE85LF Datasheet
- TO-236-3, SC-59, SOT-23-3
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 14609
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number 2SK2009TE85LF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 30V 200MA SC59-3 |
Package Cut Tape (CT) |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SC-59-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 200mW (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) |
Rds On (Max) @ Id, Vgs 2Ohm @ 50MA, 2.5V |
Vgs(th) (Max) @ Id 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds 70 pF @ 3 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 2.5V |
Package_case TO-236-3, SC-59, SOT-23-3 |
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