A2G35S200-01SR3

NXP USA Inc. A2G35S200-01SR3

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  • A2G35S200-01SR3
  • NXP USA Inc.
  • AIRFAST RF POWER GAN TRANSISTOR
  • Transistors - FETs, MOSFETs - RF
  • A2G35S200-01SR3 Datasheet
  • NI-400S-2S
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 11304
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
A2G35S200-01SR3
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
NXP USA Inc.
Description
AIRFAST RF POWER GAN TRANSISTOR
Package
Cut Tape (CT)
Series
-
Package / Case
NI-400S-2S
Supplier Device Package
NI-400S-2S
Frequency
3.4GHz ~ 3.6GHz
Gain
16.1dB
Noise Figure
-
Power - Output
180W
Transistor Type
GaN HEMT
Voltage - Test
48 V
Current - Test
291 mA
Voltage - Rated
125 V
Current Rating (Amps)
-
Package_case
NI-400S-2S

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NXP USA Inc.
NXP USA Inc.
NXP USA Inc. is a globally leading semiconductor company and a subsidiary of NXP in the United States.
The predecessor of NXP USA Inc. can be traced back to Philips' semiconductor division established...
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