NXP USA Inc. A2G35S200-01SR3
- A2G35S200-01SR3
- NXP USA Inc.
- AIRFAST RF POWER GAN TRANSISTOR
- Transistors - FETs, MOSFETs - RF
- A2G35S200-01SR3 Datasheet
- NI-400S-2S
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 11304
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number A2G35S200-01SR3 |
Category Transistors - FETs, MOSFETs - RF |
Manufacturer NXP USA Inc. |
Description AIRFAST RF POWER GAN TRANSISTOR |
Package Cut Tape (CT) |
Series - |
Package / Case NI-400S-2S |
Supplier Device Package NI-400S-2S |
Frequency 3.4GHz ~ 3.6GHz |
Gain 16.1dB |
Noise Figure - |
Power - Output 180W |
Transistor Type GaN HEMT |
Voltage - Test 48 V |
Current - Test 291 mA |
Voltage - Rated 125 V |
Current Rating (Amps) - |
Package_case NI-400S-2S |
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