Texas Instruments BQ4010YMA-85
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- BQ4010YMA-85
- Texas Instruments
- IC NVSRAM 64KBIT PARALLEL 28DIP
- General Memory
- BQ4010YMA-85 Datasheet
- 28-DIP Module (0.61\", 15.49mm)
- Tape & Reel (TR)
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Lead free / RoHS Compliant - 819
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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What is BQ4010YMA-85
Texas Instruments Part Number BQ4010YMA-85（General Memory）, developed and manufactured by Texas Instruments, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
BQ4010YMA-85 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
BQ4010YMA-85 Specifications
- Part NumberBQ4010YMA-85
- CategoryGeneral Memory
- ManufacturerTexas Instruments
- DescriptionIC NVSRAM 64KBIT PARALLEL 28DIP
- PackageTape & Reel (TR)
- Series-
- Voltage - Supply4.5V ~ 5.5V
- Operating Temperature0°C ~ 70°C (TA)
- Mounting TypeThrough Hole
- Package / Case28-DIP Module (0.61\", 15.49mm)
- Supplier Device Package28-DIP Module (18.42x37.72)
- Memory Size64Kb (8K x 8)
- TechnologyNVSRAM (Non-Volatile SRAM)
- Memory TypeNon-Volatile
- Clock Frequency-
- Access Time85 ns
- Memory FormatNVSRAM
- Write Cycle Time - Word, Page85ns
- Memory InterfaceParallel
Application of BQ4010YMA-85
BQ4010YMA-85 Datasheet
BQ4010YMA-85 Datasheet , Tape & Reel (TR),4.5V ~ 5.5V,0°C ~ 70°C (TA),Through Hole,28-DIP Module (0.61\", 15.49mm),28-DIP Module (18.42x37.72),64Kb (8K x 8),NVSRAM (Non-Volatile SRAM),Non-Volatile,85 ns,NVSRAM,85ns,Parallel
BQ4010YMA-85 Classification
General Memory
FAQ about General Memory
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1. What is the difference between RAM and ROM?
RAM is volatile storage and is used to temporarily store data; while ROM is non-volatile storage, which can still save data after the device is turned off, and is usually used to store unchangeable data such as system startup programs.
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2. What is SSD and how to distinguish it from HDD?
SSD (Solid State Drive) is a non-volatile storage device that stores data through flash memory. It has faster read and write speeds than HDD (Hard Disk Drive), no mechanical structure, and long life, but the price is relatively higher.
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3. What is High Bandwidth Memory (HBM) and what are its advantages?
HBM is a high-bandwidth, low-latency memory technology commonly used in graphics cards and AI accelerators that can handle a large number of parallel computing tasks. HBM's stacked architecture makes it take up less space and more efficient, making it an ideal choice for big data and high-performance computing applications.
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