Infineon Technologies BSC016N04LSGATMA1
- BSC016N04LSGATMA1
- Infineon Technologies
- MOSFET N-CH 40V 31A/100A TDSON
- Transistors - FETs, MOSFETs - Single
- BSC016N04LSGATMA1 Datasheet
- 8-PowerTDFN
- -Reel®
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Lead free / RoHS Compliant - 2770
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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What is BSC016N04LSGATMA1
Infineon Technologies Part Number BSC016N04LSGATMA1(Transistors - FETs, MOSFETs - Single), developed and manufactured by Infineon Technologies, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
BSC016N04LSGATMA1 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
BSC016N04LSGATMA1 Specifications
- Part NumberBSC016N04LSGATMA1
- CategoryTransistors - FETs, MOSFETs - Single
- ManufacturerInfineon Technologies
- DescriptionMOSFET N-CH 40V 31A/100A TDSON
- Package-Reel®
- SeriesOptiMOS™
- Operating Temperature-55°C ~ 150°C (TJ)
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Supplier Device PackagePG-TDSON-8-1
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation (Max)2.5W (Ta), 139W (Tc)
- FET TypeN-Channel
- FET Feature-
- Drain to Source Voltage (Vdss)40 V
- Current - Continuous Drain (Id) @ 25°C31A (Ta), 100A (Tc)
- Rds On (Max) @ Id, Vgs1.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id2V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds12000 pF @ 20 V
- Vgs (Max)±20V
- Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Application of BSC016N04LSGATMA1
BSC016N04LSGATMA1 Datasheet
BSC016N04LSGATMA1 Datasheet , -Reel®,OptiMOS™,-55°C ~ 150°C (TJ),Surface Mount,8-PowerTDFN,PG-TDSON-8-1,MOSFET (Metal Oxide),2.5W (Ta), 139W (Tc),N-Channel,40 V,31A (Ta), 100A (Tc),1.6mOhm @ 50A, 10V,2V @ 85µA,150 nC @ 10 V,12000 pF
BSC016N04LSGATMA1 Classification
Transistors - FETs, MOSFETs - Single
FAQ about Transistors - FETs, MOSFETs - Single
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1. What is a MOSFET?
A MOSFET is a voltage-controlled field-effect transistor. It controls the flow of current between the source (Source, S) and drain (Drain, D) by applying a voltage to the gate (Gate, G).
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2. Why use MOSFETs instead of transistors?
MOSFETs are superior to traditional BJT transistors in many applications due to their high input impedance, low power consumption, high speed, and easy integration.
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3. What are the 4 types of MOSFETs?
N-channel enhancement type.
N-channel depletion type.
P-channel enhancement type.
P-channel depletion type.
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