Vishay Semiconductor - Diodes Division BYG22A-E3/TR
- BYG22A-E3/TR
- Vishay Semiconductor - Diodes Division
- DIODE AVALANCHE 50V 2A DO214AC
- Diodes - Rectifiers - Single
- BYG22A-E3/TR Datasheet
- DO-214AC, SMA
- Cut Tape (CT)
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What is BYG22A-E3/TR
Vishay Semiconductor - Diodes Division Part Number BYG22A-E3/TR(Diodes - Rectifiers - Single), developed and manufactured by Vishay Semiconductor - Diodes Division, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
BYG22A-E3/TR is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
BYG22A-E3/TR Specifications
- Part NumberBYG22A-E3/TR
- CategoryDiodes - Rectifiers - Single
- ManufacturerVishay Semiconductor - Diodes Division
- DescriptionDIODE AVALANCHE 50V 2A DO214AC
- PackageCut Tape (CT)
- Series-
- Mounting TypeSurface Mount
- Package / CaseDO-214AC, SMA
- Supplier Device PackageDO-214AC (SMA)
- Diode TypeAvalanche
- Current - Average Rectified (Io)2A
- Voltage - Forward (Vf) (Max) @ If1.1 V @ 2 A
- Current - Reverse Leakage @ Vr1 µA @ 50 V
- Capacitance @ Vr, F-
- Voltage - DC Reverse (Vr) (Max)50 V
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)25 ns
- Operating Temperature - Junction-55°C ~ 150°C
Application of BYG22A-E3/TR
BYG22A-E3/TR Datasheet
BYG22A-E3/TR Datasheet , Cut Tape (CT),Surface Mount,DO-214AC, SMA,DO-214AC (SMA),Avalanche,2A,1.1 V @ 2 A,1 µA @ 50 V,50 V,Fast Recovery =< 500ns, > 200mA (Io),25 ns,-55°C ~ 150°C
BYG22A-E3/TR Classification
Diodes - Rectifiers - Single
FAQ about Diodes - Rectifiers - Single
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1. What is the maximum reverse voltage (PIV) of a rectifier diode?
The Peak Inverse Voltage (PIV) is the maximum reverse voltage that a diode can withstand. When selecting a diode, the PIV must be higher than the maximum reverse voltage in the circuit, usually twice or more the input voltage.
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2. Can a single rectifier diode be used for high-frequency applications?
Traditional silicon rectifier diodes are not suitable for high-frequency applications because their reverse recovery time is relatively long. For high-frequency applications, fast recovery diodes or Schottky diodes are typically used to reduce switching losses and improve efficiency.
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3. How to improve the efficiency of rectifier diodes?
The use of Schottky diodes or fast recovery diodes can reduce forward voltage drop and reverse recovery time, thereby improving the efficiency of rectifier circuits, especially in high-frequency applications.
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