CE2A3Q-T-AZ

Renesas Electronics America Inc CE2A3Q-T-AZ

The picture is for reference only, please refer to the product specification

  • CE2A3Q-T-AZ
  • Renesas Electronics America Inc
  • SMALL SIGNAL BIPOLAR TRANSISTOR
  • Transistors - Bipolar (BJT) - Single
  • CE2A3Q-T-AZ Datasheet
  • -
  • -Reel®
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 8717
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates

What is CE2A3Q-T-AZ

Renesas Electronics America Inc Part Number CE2A3Q-T-AZTransistors - Bipolar (BJT) - Single), developed and manufactured by Renesas Electronics America Inc, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

CE2A3Q-T-AZ is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

CE2A3Q-T-AZ Specifications

  • Part NumberCE2A3Q-T-AZ
  • CategoryTransistors - Bipolar (BJT) - Single
  • ManufacturerRenesas Electronics America Inc
  • DescriptionSMALL SIGNAL BIPOLAR TRANSISTOR
  • Package-Reel®
  • Series-
  • Operating Temperature-
  • Mounting Type-
  • Package / Case-
  • Supplier Device Package-
  • Power - Max-
  • Transistor Type-
  • Current - Collector (Ic) (Max)-
  • Voltage - Collector Emitter Breakdown (Max)-
  • Vce Saturation (Max) @ Ib, Ic-
  • Current - Collector Cutoff (Max)-
  • DC Current Gain (hFE) (Min) @ Ic, Vce-
  • Frequency - Transition-

Application of CE2A3Q-T-AZ

Bipolar - Single as the main function of the amplifier and switching element. In amplifier applications, BJTS are capable of amplifying the current of the input signal to drive a larger load. In switching applications, the BJT can be used as a high-speed switch to turn the current path between the collector and the emitter on or off by controlling the base current. In addition, BJT can also be used to build oscillators, mixers and other circuits.

CE2A3Q-T-AZ Datasheet

CE2A3Q-T-AZ Datasheet , -Reel®

CE2A3Q-T-AZ Classification

Transistors - Bipolar (BJT) - Single

Bipolar (BJT) -Single refers to a single Bipolar Junction Transistor (BJT), which is a commonly used semiconductor device with two PN junctions, usually composed of an NPN or PNP structure. The BJT is capable of amplifying the current and regulating the current between the collector and emitter by controlling the base current. A single BJT is the basic building block of many electronic circuits and can be used for a variety of functions such as amplification, switching, and signal processing.

FAQ about Transistors - Bipolar (BJT) - Single

  • 1. Is BJT bipolar or unipolar?

    BJT (bipolar junction transistor) is bipolar. BJT (bipolar junction transistor) is composed of two N-type semiconductors sandwiched between a P-type semiconductor, with an emitter junction formed between the emitter and the base, and a collector junction formed between the collector and the base. When the power is turned on, the majority carriers (electrons) in the emitter and the majority carriers (holes) in the base diffuse with each other, forming a current amplification effect.
    The working principle of BJT is to achieve current amplification through the control of two PN junctions (emitter junction and collector junction). When the emitter junction is forward biased, electrons are injected from the emitter region into the base region; when the collector junction is reverse biased, electrons are injected from the base region into the collector region. Because the base region is very thin and the impurity content is strictly controlled, most electrons can enter the collector region through the collector junction to form the collector current Ic, and only a small number of electrons recombine with holes in the base region to form the base current Ib. Therefore, by controlling the base current Ib, the collector current Ic can be amplified to achieve current amplification.

  • 2. What is the difference between bipolar transistors and CMOS transistors?

    The main differences between bipolar transistors and CMOS transistors are in working principles, structures, application scenarios, and power consumption.
    Working principle
    Bipolar transistor: Bipolar transistors have two types of carriers (holes and electrons) involved in conduction, and they are made of three parts of semiconductors with different doping levels. In bipolar transistors, the emitter emits free electrons, the collector receives holes, and the base controls the on and off of the current.
    CMOS transistor: CMOS transistors have only one type of carrier (electrons or holes) involved in conduction, usually using a combination of P-type semiconductors and N-type semiconductors. In CMOS transistors, when the gate voltage is zero, the current does not flow. Only when the gate voltage reaches a certain value, the current will flow, which makes the CMOS transistor consume almost no power when static.

  • 3. Is PNP transistor bipolar?

    PNP transistor is a bipolar transistor. PNP transistor is a bipolar transistor used in electronic circuits to amplify, switch and control current. Its name "PNP" represents the three different semiconductor regions in its structure: two positive poles (P type) and one negative pole (N type).

• Prompt Responsiveness

• Guaranteed Quality

• Global Access

• Competitive Market Price

• One-Stop support services of supply chain

Jinftry, Your most trustworthy component supplier, welcome to send us the inquiry, thank you!

Do you have any questions about CE2A3Q-T-AZ ?
Feel free to contact us:

+86-755-28503874
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Email first will be appreciative )

Customer reviews

Post your comment

Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America Inc. is a semiconductor manufacturing company that specializes in designing, manufacturing, and selling embedded semiconductor solutions. Renesas Electronics America Inc. is the subsidiary of Renesas Electronics Corporation in the United...
2SD1692-AZ
2SD1692-AZ

POWER BIPOLAR TRANSISTOR NPN

2SA1385
2SA1385

POWER BIPOLAR TRANSISTOR NPN

UPA2004GR-A
UPA2004GR-A

POWER BIPOLAR TRANSISTOR NPN

2SB860-E
2SB860-E

POWER BIPOLAR TRANSISTOR NPN

2SA1006B-AZ
2SA1006B-AZ

POWER BIPOLAR TRANSISTOR NPN

2SA1194KV
2SA1194KV

POWER BIPOLAR TRANSISTOR NPN

2SB1079-E
2SB1079-E

POWER BIPOLAR TRANSISTOR NPN

2SA673C
2SA673C

POWER BIPOLAR TRANSISTOR NPN

Electronic Parts Index
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-28503874 Email: [email protected] Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP