CP307V-MPSA13-WN

Central Semiconductor Corp CP307V-MPSA13-WN

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  • CP307V-MPSA13-WN
  • Central Semiconductor Corp
  • POWER TRANSISTOR NPN DIE
  • Transistors - Bipolar (BJT) - Single
  • CP307V-MPSA13-WN Datasheet
  • Die
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 26315
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
CP307V-MPSA13-WN
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Central Semiconductor Corp
Description
POWER TRANSISTOR NPN DIE
Package
Bulk
Series
-
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Power - Max
625 mW
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
30 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA, 5V
Frequency - Transition
125MHz
Package_case
Die

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