DF2B12M2SC,L3F

Toshiba Semiconductor and Storage DF2B12M2SC,L3F

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  • DF2B12M2SC,L3F
  • Toshiba Semiconductor and Storage
  • TVS DIODE 8VWM 18VC SC2
  • TVS - Diodes
  • DF2B12M2SC,L3F Datasheet
  • 2-SMD, No Lead
  • 2-SMD, No Lead
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 9476
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
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What is DF2B12M2SC,L3F

Toshiba Semiconductor and Storage Part Number DF2B12M2SC,L3F（TVS - Diodes）, developed and manufactured by Toshiba Semiconductor and Storage, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

DF2B12M2SC,L3F is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

DF2B12M2SC,L3F Specifications

  • Part NumberDF2B12M2SC,L3F
  • CategoryTVS - Diodes
  • ManufacturerToshiba Semiconductor and Storage
  • DescriptionTVS DIODE 8VWM 18VC SC2
  • Package2-SMD, No Lead
  • Series-
  • TypeSteering (Rail to Rail)
  • Mounting TypeSurface Mount
  • Package / Case2-SMD, No Lead
  • Supplier Device PackageSC2
  • ApplicationsGeneral Purpose
  • Unidirectional Channels1
  • Voltage - Reverse Standoff (Typ)8V (Max)
  • Voltage - Breakdown (Min)10V
  • Voltage - Clamping (Max) @ Ipp18V (Typ)
  • Current - Peak Pulse (10/1000µs)1A (8/20µs)
  • Power Line ProtectionNo
  • Capacitance @ Frequency0.2pF @ 1MHz

Application of DF2B12M2SC,L3F

TVS - Diodes play a vital role in the design of electronic products, and its application fields are very wide. In the field of consumer electronics, such as smartphones, tablets, televisions, etc., TVS diodes are used to protect internal integrated circuits from electrostatic discharge and power fluctuations. In the field of industrial automation, they are used to protect critical equipment such as motor drives and PLC (programmable logic controllers) to ensure the stable operation of production lines. In addition, TVS diodes are also essential components in automotive electronic systems, which can protect on-board electronic systems from transient voltages caused by engine ignition, load mutations, etc. In the field of communication and data transmission, TVS diodes are also used to protect signal transmission lines to ensure the integrity and reliability of data transmission. In general, TVS diodes, with their excellent transient voltage protection capabilities, play an irreplaceable role in ensuring the safe and stable operation of electronic equipment.

DF2B12M2SC,L3F Datasheet

DF2B12M2SC,L3F Datasheet , 2-SMD, No Lead,Steering (Rail to Rail),Surface Mount,2-SMD, No Lead,SC2,General Purpose,1,8V (Max),10V,18V (Typ),1A (8/20µs),No,0.2pF @ 1MHz

DF2B12M2SC,L3F Classification

TVS - Diodes

TVS - Diodes are electronic components designed to protect circuits from transient overvoltage damage. They protect other sensitive components in the circuit from damage by quickly switching on and directing excess transient voltage to ground or power supply. TVS diodes are typically constructed of PN junction or metal oxide semiconductor structures with extremely fast response times and low clamping voltage characteristics. Its design principle is based on the avalanche breakdown effect, that is, when a specific voltage threshold is reached, the diode will rapidly change from a high resistance state to a low resistance state, limiting the transient voltage to a safe level. TVS diodes are used in a wide variety of electronic devices, especially those that need to protect critical circuits from lightning strikes, electrostatic discharges, or other transient voltage events.

FAQ about TVS - Diodes

  • 1. TVS is the abbreviation of diode. What does it mean?

    TVS is the abbreviation of Transient Voltage Suppressor, also known as Transient Voltage Suppression Diode.
    How TVS diodes work
    TVS diodes work using the avalanche breakdown effect. When the TVS diode receives a reverse voltage, the depletion layer near its PN junction will increase, causing the electric field intensity to increase, which in turn triggers the avalanche effect and causes the reverse current to increase sharply. Unlike ordinary diodes, TVS diodes can recover after avalanche breakdown and continue to work normally.

  • 2. How do TVS diodes fail?

    The failure modes of TVS diodes mainly include short circuit failure, open circuit failure and performance degradation‌. These failure modes can have a serious impact on the normal operation and protection functions of the circuit.
    short circuit fault
    Short circuit failure is one of the most common failure modes of TVS diodes. When a TVS diode is short-circuited, it changes to a low-impedance state, allowing a large amount of current to pass through, which may cause the circuit to not function properly and may even damage other circuit components. Causes of short circuit faults include:
    Thermal breakdown: In a high temperature environment or when subjected to excessive transient energy impact, the PN junction of the TVS diode may undergo thermal breakdown, resulting in a short circuit.
    Over-electrical stress: When the transient pulse energy exceeds the energy that the TVS can withstand, it will cause over-electrical stress damage and even directly cause burnout.
    Manufacturing process issues: Such as chip bonding interface voids, mesa defects, strong accumulation layer or strong inversion layer on the surface, chip cracks, uneven impurity diffusion, etc., which may cause short circuit failures of TVS diodes during manufacturing or use.

  • 3. What is the difference between TVS diodes and MOVs?

    The main differences between TVS diodes and MOV varistors lie in their working principles, application scenarios and performance parameters.
    Working principle
    TVS diode: TVS diode (Transient Voltage Suppressor) is a semiconductor device with a high-sensitivity N/P junction. When the reverse voltage exceeds its breakdown voltage, the TVS diode will conduct quickly and introduce the surge current into the ground, thereby protecting the subsequent circuit. The response speed of TVS diodes is very fast, usually within nanoseconds.
    MOV varistor: MOV varistor (Metal-Oxide Varistor) is a multi-layer varistor made of multi-layer zinc oxide material. When the voltage exceeds its varistor voltage, the MOV will conduct, absorb the surge energy, and clamp the voltage within a safe range. MOV has a long response time, usually completing the response within microseconds.

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage is a company dedicated to the research, development, production, and sales of semiconductor and storage solutions.
In 1875, Toshiba Semiconductor and Storage was founded in Tokyo, Japan. The company's products...
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