Diodes Incorporated DMN4031SSDQ-13
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- DMN4031SSDQ-13
- Diodes Incorporated
- MOSFET 2N-CH 40V 5.2A 8SOIC
- Transistors - FETs, MOSFETs - Arrays
- DMN4031SSDQ-13 Datasheet
- 8-SOIC (0.154\", 3.90mm Width)
- Bulk
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Lead free / RoHS Compliant - 17459
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
What is DMN4031SSDQ-13
Diodes Incorporated Part Number DMN4031SSDQ-13（Transistors - FETs, MOSFETs - Arrays）, developed and manufactured by Diodes Incorporated, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
DMN4031SSDQ-13 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
DMN4031SSDQ-13 Specifications
- Part NumberDMN4031SSDQ-13
- CategoryTransistors - FETs, MOSFETs - Arrays
- ManufacturerDiodes Incorporated
- DescriptionMOSFET 2N-CH 40V 5.2A 8SOIC
- PackageBulk
- Series-
- Operating Temperature-55°C ~ 150°C (TJ)
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154\", 3.90mm Width)
- Supplier Device Package8-SO
- Power - Max1.42W
- FET Type2 N-Channel (Dual)
- FET FeatureStandard
- Drain to Source Voltage (Vdss)40V
- Current - Continuous Drain (Id) @ 25°C5.2A
- Rds On (Max) @ Id, Vgs31mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs18.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds945pF @ 20V
Application of DMN4031SSDQ-13
DMN4031SSDQ-13 Datasheet
DMN4031SSDQ-13 Datasheet , Bulk,-55°C ~ 150°C (TJ),Surface Mount,8-SOIC (0.154\", 3.90mm Width),8-SO,1.42W,2 N-Channel (Dual),Standard,40V,5.2A,31mOhm @ 6A, 10V,3V @ 250µA,18.6nC @ 10V,945pF @ 20V
DMN4031SSDQ-13 Classification
Transistors - FETs, MOSFETs - Arrays
FAQ about Transistors - FETs, MOSFETs - Arrays
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1. What is MOSFET and how does it work?
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), that is, metal-oxide-semiconductor field effect transistor, is a transistor that uses electric field effect to control conduction and shutdown. MOSFET controls the flow of current between the source and drain by applying voltage to the gate. Its working principle is as follows:
Working principle:
When a positive voltage is applied to the gate, the electric field causes the impurities in the substrate to form an "open" n-type or p-type conductive area, i.e., a channel, between the gate and the substrate. A capacitor is formed between the oxide layer above the channel and the gate, called the gate capacitance. When the channel conductive area extends to the source and drain, the MOSFET is in the on state. In the on state, the voltage difference between the source and the drain drives the current to flow through the conductive area.
When a negative voltage is applied to the gate, the channel on the substrate shrinks, the conductivity weakens, and the current between the source and the drain decreases. When the gate voltage continues to decrease, the channel eventually disappears, the MOSFET is in the off state, there is no conductive path between the source and the drain, and the MOSFET is in a high-resistance state.
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2. What are the two types of MOSFET transistors?
There are two main types of MOSFET transistors: enhancement MOSFET and depletion MOSFET.
Enhancement MOSFET
When the gate voltage of the enhancement MOSFET is zero, there is no conductive channel between the source and the drain. Only when the gate voltage reaches a certain threshold voltage, the conductive channel will be formed and the current will begin to flow. This type of MOSFET requires a positive voltage to be applied to the gate to turn on, and is in a high-resistance state when no voltage is applied.
Depletion-type MOSFET
When the gate voltage of a depletion-type MOSFET is zero, a conductive channel already exists between the source and drain. Applying a negative gate voltage can reduce or deplete the conductive channel, thereby controlling the current. This type of MOSFET is already turned on when no voltage is applied, and needs to be turned off by applying a negative voltage.
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3. Why do we use MOSFET instead of FET?
The main reason why we use MOSFET instead of FET is the characteristics and advantages of MOSFET.
MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) is a voltage-controlled device with the following main features and advantages:
Fast switching speed: MOSFET has a very fast switching speed, which makes it perform well in high-frequency applications. Its fast switching characteristics make MOSFET widely used in switching power supplies, motor control, inverters and other fields.
High input impedance: The input impedance of MOSFET is very high, which means that it is less sensitive to external interference during operation and can provide more stable performance.
Low noise: Since MOSFET is a voltage-controlled device, it generates less noise during operation, which is suitable for noise-sensitive application scenarios.
Low drive power: MOSFET has a small drive power, which means that the design of the drive circuit can be simpler and more efficient.
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