Diodes Incorporated DMT3009LDT-7
- DMT3009LDT-7
- Diodes Incorporated
- MOSFET 2N-CH 30V 30A V-DFN3030-8
- Transistors - FETs, MOSFETs - Arrays
- DMT3009LDT-7 Datasheet
- 8-VDFN Exposed Pad
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 23409
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number DMT3009LDT-7 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Diodes Incorporated |
Description MOSFET 2N-CH 30V 30A V-DFN3030-8 |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-VDFN Exposed Pad |
Supplier Device Package V-DFN3030-8 (Type K) |
Power - Max 1.2W |
FET Type 2 N-Channel (Dual) Asymmetrical |
FET Feature Standard |
Drain to Source Voltage (Vdss) 30V |
Current - Continuous Drain (Id) @ 25°C 30A |
Rds On (Max) @ Id, Vgs 11.1mOhm @ 14.4A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 20nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V |
Package_case 8-VDFN Exposed Pad |
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Diodes Incorporated
Diodes Incorporated - Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. In November 2015, Pericom Semiconductor became ...
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