EPC2012C

EPC EPC2012C

The picture is for reference only, please refer to the product specification

  • EPC2012C
  • EPC
  • GANFET N-CH 200V 5A DIE OUTLINE
  • Transistors - FETs, MOSFETs - Single
  • EPC2012C Datasheet
  • Die
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 19102
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
EPC2012C
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
EPC
Description
GANFET N-CH 200V 5A DIE OUTLINE
Package
Tape & Reel (TR)
Series
eGaN®
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die Outline (4-Solder Bar)
Technology
GaNFET (Gallium Nitride)
Power Dissipation (Max)
-
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Rds On (Max) @ Id, Vgs
100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 100 V
Vgs (Max)
+6V, -4V
Drive Voltage (Max Rds On, Min Rds On)
5V
Package_case
Die

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