FDB33N25TM

Fairchild Semiconductor FDB33N25TM

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  • FDB33N25TM
  • Fairchild Semiconductor
  • POWER FIELD-EFFECT TRANSISTOR, 3
  • Transistors - FETs, MOSFETs - Single
  • FDB33N25TM Datasheet
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4351
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
FDB33N25TM
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Fairchild Semiconductor
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Package
Bulk
Series
UniFET™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D²PAK (TO-263)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
235W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Rds On (Max) @ Id, Vgs
94mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2.135 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Fairchild Semiconductor
Fairchild Semiconductor
Fairchild is now part of ON Semiconductor Together, we deliver a more extensive product portfolio of power discretes, ICs and power modules, plus a complete offering of low, mid and high voltage products ...
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