EPC2016C

EPC EPC2016C

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  • EPC2016C
  • EPC
  • GANFET N-CH 100V 18A DIE
  • Transistors - FETs, MOSFETs - Single
  • EPC2016C Datasheet
  • Die
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 19924
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
EPC2016C
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
EPC
Description
GANFET N-CH 100V 18A DIE
Package
Tape & Reel (TR)
Series
eGaN®
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Technology
GaNFET (Gallium Nitride)
Power Dissipation (Max)
-
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
18A (Ta)
Rds On (Max) @ Id, Vgs
16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id
2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 50 V
Vgs (Max)
+6V, -4V
Drive Voltage (Max Rds On, Min Rds On)
5V
Package_case
Die

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