EPC EPC2010
- EPC2010
- EPC
- GANFET N-CH 200V 12A DIE
- Transistors - FETs, MOSFETs - Single
- EPC2010 Datasheet
- Die
- Jinftry-Reel®
-
Lead free / RoHS Compliant
- 22696
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- 1 year quality assurance 》
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Part Number EPC2010 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer EPC |
Description GANFET N-CH 200V 12A DIE |
Package Jinftry-Reel® |
Series eGaN® |
Operating Temperature -40°C ~ 125°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
Technology GaNFET (Gallium Nitride) |
Power Dissipation (Max) - |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 200 V |
Current - Continuous Drain (Id) @ 25°C 12A (Ta) |
Rds On (Max) @ Id, Vgs 25mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id 2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 100 V |
Vgs (Max) +6V, -4V |
Drive Voltage (Max Rds On, Min Rds On) 5V |
Package_case Die |
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