Vishay Semiconductor - Diodes Division ESH3CHE3_A/I
- ESH3CHE3_A/I
- Vishay Semiconductor - Diodes Division
- DIODE GEN PURP 150V 3A DO214AB
- Diodes - Rectifiers - Single
- ESH3CHE3_A/I Datasheet
- DO-214AB, SMC
- Tape & Reel (TR)
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Lead free / RoHS Compliant - 3934
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What is ESH3CHE3_A/I
Vishay Semiconductor - Diodes Division Part Number ESH3CHE3_A/I(Diodes - Rectifiers - Single), developed and manufactured by Vishay Semiconductor - Diodes Division, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
ESH3CHE3_A/I is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
ESH3CHE3_A/I Specifications
- Part NumberESH3CHE3_A/I
- CategoryDiodes - Rectifiers - Single
- ManufacturerVishay Semiconductor - Diodes Division
- DescriptionDIODE GEN PURP 150V 3A DO214AB
- PackageTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Mounting TypeSurface Mount
- Package / CaseDO-214AB, SMC
- Supplier Device PackageDO-214AB (SMC)
- Diode TypeStandard
- Current - Average Rectified (Io)3A
- Voltage - Forward (Vf) (Max) @ If900 mV @ 3 A
- Current - Reverse Leakage @ Vr5 µA @ 150 V
- Capacitance @ Vr, F70pF @ 4V, 1MHz
- Voltage - DC Reverse (Vr) (Max)150 V
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)40 ns
- Operating Temperature - Junction-55°C ~ 175°C
Application of ESH3CHE3_A/I
ESH3CHE3_A/I Datasheet
ESH3CHE3_A/I Datasheet , Tape & Reel (TR),Automotive, AEC-Q101,Surface Mount,DO-214AB, SMC,DO-214AB (SMC),Standard,3A,900 mV @ 3 A,5 µA @ 150 V,70pF @ 4V, 1MHz,150 V,Fast Recovery =< 500ns, > 200mA (Io),40 ns,-55°C ~ 175°C
ESH3CHE3_A/I Classification
Diodes - Rectifiers - Single
FAQ about Diodes - Rectifiers - Single
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1. What is forward voltage drop?
Forward voltage drop refers to the voltage drop generated when the current passes through a diode when it is conducting. The forward voltage drop of silicon rectifier diodes is usually around 0.7V, while the forward voltage drop of Schottky diodes is usually lower, between 0.2V and 0.3V.
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2. What is the difference between Schottky diodes and traditional silicon rectifier diodes?
Schottky diodes have a lower forward voltage drop (typically 0.2V to 0.3V) and faster switching speed, making them suitable for high-frequency applications. However, their reverse voltage is relatively low and is typically used in circuits with lower voltages.
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3. What is the reverse recovery time of a rectifier diode?
Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.
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