ON Semiconductor FQB8N90CTM
- FQB8N90CTM
- ON Semiconductor
- MOSFET N-CH 900V 6.3A D2PAK
- Transistors - FETs, MOSFETs - Single
- FQB8N90CTM Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Bulk
- Lead free / RoHS Compliant
- 3765
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FQB8N90CTM |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 900V 6.3A D2PAK |
Package Bulk |
Series QFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package D²PAK (TO-263) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 171W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 900 V |
Current - Continuous Drain (Id) @ 25°C 6.3A (Tc) |
Rds On (Max) @ Id, Vgs 1.9Ohm @ 3.15A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2080 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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