GA50JT17-247

GeneSiC Semiconductor GA50JT17-247

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  • GA50JT17-247
  • GeneSiC Semiconductor
  • TRANS SJT 1700V 100A TO247
  • Transistors - FETs, MOSFETs - Single
  • GA50JT17-247 Datasheet
  • TO-247-3
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3593
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
GA50JT17-247
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 1700V 100A TO247
Package
Bulk
Series
-
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Technology
SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max)
583W (Tc)
FET Type
-
FET Feature
-
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
25mOhm @ 50A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
TO-247-3

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