GD25Q128EWIGR

GigaDevice Semiconductor (HK) Limited GD25Q128EWIGR

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  • GD25Q128EWIGR
  • GigaDevice Semiconductor (HK) Limited
  • 128MBIT NOR FLASH /3.3V /WSON8 6
  • Memory
  • GD25Q128EWIGR Datasheet
  • 8-WDFN Exposed Pad
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2157
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
GD25Q128EWIGR
Category
Memory
Manufacturer
GigaDevice Semiconductor (HK) Limited
Description
128MBIT NOR FLASH /3.3V /WSON8 6
Package
Tape & Reel (TR)
Series
-
Voltage - Supply
2.7V ~ 3.6V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
8-WDFN Exposed Pad
Supplier Device Package
8-WSON (5x6)
Memory Size
128Mb (16M x 8)
Technology
FLASH - NOR
Memory Type
Non-Volatile
Clock Frequency
133 MHz
Access Time
7 ns
Memory Format
FLASH
Write Cycle Time - Word, Page
70µs, 2.4ms
Memory Interface
SPI - Quad I/O
Package_case
8-WDFN Exposed Pad

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GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor Inc. was founded in April 2005 and is a Chinese company headquartered in Beijing, China. It has branches and offices in multiple countries and regions including Shanghai, Shenzhen, Hefei, Xi'an, Chengdu, Hong...
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