GP1M005A050H

Global Power Technologies Group GP1M005A050H

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  • GP1M005A050H
  • Global Power Technologies Group
  • MOSFET N-CH 500V 4.5A TO220
  • Transistors - FETs, MOSFETs - Single
  • GP1M005A050H Datasheet
  • TO-220-3
  • TO-220-3
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 27099
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
GP1M005A050H
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Global Power Technologies Group
Description
MOSFET N-CH 500V 4.5A TO220
Package
TO-220-3
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
92.5W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Rds On (Max) @ Id, Vgs
1.65 Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
627pF @ 25V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Package_case
TO-220-3

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