GP1M006A065CH

Global Power Technologies Group GP1M006A065CH

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  • GP1M006A065CH
  • Global Power Technologies Group
  • MOSFET N-CH 650V 5.5A DPAK
  • Transistors - FETs, MOSFETs - Single
  • GP1M006A065CH Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 23973
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
GP1M006A065CH
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Global Power Technologies Group
Description
MOSFET N-CH 650V 5.5A DPAK
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-Pak
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
120W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Rds On (Max) @ Id, Vgs
1.6 Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1177pF @ 25V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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