IGB03N120H2ATMA1616

Infineon Technologies IGB03N120H2ATMA1616

The picture is for reference only, please refer to the product specification

  • IGB03N120H2ATMA1616
  • Infineon Technologies
  • POWER BIPOLAR TRANSISTOR
  • Transistors - Bipolar (BJT) - Single
  • IGB03N120H2ATMA1616 Datasheet
  • -
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2464
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IGB03N120H2ATMA1616
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Infineon Technologies
Description
POWER BIPOLAR TRANSISTOR
Package
Bulk
Series
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Power - Max
-
Transistor Type
-
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Frequency - Transition
-
Package_case
-

IGB03N120H2ATMA1616 Guarantees

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+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
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Infineon Technologies
Infineon Technologies
Founded on April 1, 1999, Infineon Technologies is a leading global semiconductor company and one of the largest semiconductor product manufacturers in Germany. The company is headquartered in Munich, Germany, and its predecessor was the...
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