Infineon Technologies IGB03N120H2ATMA1616
- IGB03N120H2ATMA1616
- Infineon Technologies
- POWER BIPOLAR TRANSISTOR
- Transistors - Bipolar (BJT) - Single
- IGB03N120H2ATMA1616 Datasheet
- -
- Bulk
- Lead free / RoHS Compliant
- 2464
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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Part Number IGB03N120H2ATMA1616 |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Infineon Technologies |
Description POWER BIPOLAR TRANSISTOR |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Power - Max - |
Transistor Type - |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) - |
Vce Saturation (Max) @ Ib, Ic - |
Current - Collector Cutoff (Max) - |
DC Current Gain (hFE) (Min) @ Ic, Vce - |
Frequency - Transition - |
Package_case - |
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