IPN95R2K0P7ATMA1

Infineon Technologies IPN95R2K0P7ATMA1

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  • IPN95R2K0P7ATMA1
  • Infineon Technologies
  • MOSFET N-CH 950V 4A SOT223
  • Transistors - FETs, MOSFETs - Single
  • IPN95R2K0P7ATMA1 Datasheet
  • TO-261-4, TO-261AA
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1105
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IPN95R2K0P7ATMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 950V 4A SOT223
Package
Cut Tape (CT)
Series
CoolMOS™ P7
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
7W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
950 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Rds On (Max) @ Id, Vgs
2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id
3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 400 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-261-4, TO-261AA

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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