SIRA01DP-T1-GE3

Vishay Siliconix SIRA01DP-T1-GE3

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  • SIRA01DP-T1-GE3
  • Vishay Siliconix
  • MOSFET P-CH 30V 26A/60A PPAK SO8
  • Transistors - FETs, MOSFETs - Single
  • SIRA01DP-T1-GE3 Datasheet
  • PowerPAK® SO-8
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3369
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SIRA01DP-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 30V 26A/60A PPAK SO8
Package
Cut Tape (CT)
Series
TrenchFET® Gen IV
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
5W (Ta), 62.5W (Tc)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
26A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs
4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3490 pF @ 15 V
Vgs (Max)
+16V, -20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
PowerPAK® SO-8

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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