Vishay Siliconix SIRA01DP-T1-GE3
- SIRA01DP-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 30V 26A/60A PPAK SO8
- Transistors - FETs, MOSFETs - Single
- SIRA01DP-T1-GE3 Datasheet
- PowerPAK® SO-8
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 3369
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SIRA01DP-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 30V 26A/60A PPAK SO8 |
Package Cut Tape (CT) |
Series TrenchFET® Gen IV |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SO-8 |
Supplier Device Package PowerPAK® SO-8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 5W (Ta), 62.5W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 26A (Ta), 60A (Tc) |
Rds On (Max) @ Id, Vgs 4.9mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 112 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3490 pF @ 15 V |
Vgs (Max) +16V, -20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case PowerPAK® SO-8 |
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Vishay Siliconix
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