IPP041N12N3 G

Infineon Technologies IPP041N12N3 G

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  • IPP041N12N3 G
  • Infineon Technologies
  • MOSFET N-CH 120V 120A TO220-3
  • Transistors - FETs, MOSFETs - Single
  • IPP041N12N3 G Datasheet
  • TO-220-3
  • TO-220-3
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 982
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IPP041N12N3 G
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 120V 120A TO220-3
Package
TO-220-3
Series
OptiMOS?
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
PG-TO-220-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
4.1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
211nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
13800pF @ 60V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
20V
Package_case
TO-220-3

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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