Infineon Technologies IRF9Z34NSPBF
- IRF9Z34NSPBF
- Infineon Technologies
- MOSFET P-CH 55V 19A D2PAK
- Transistors - FETs, MOSFETs - Single
- IRF9Z34NSPBF Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
- Lead free / RoHS Compliant
- 20146
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IRF9Z34NSPBF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET P-CH 55V 19A D2PAK |
Package Tube |
Series HEXFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package D2PAK |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.8W (Ta), 68W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 55 V |
Current - Continuous Drain (Id) @ 25°C 19A (Tc) |
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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