IRS2003PBF

Infineon Technologies IRS2003PBF

The picture is for reference only, please refer to the product specification

  • IRS2003PBF
  • Infineon Technologies
  • IC GATE DRVR HALF-BRIDGE 8DIP
  • PMIC - Gate Drivers
  • IRS2003PBF Datasheet
  • 8-DIP (0.300\", 7.62mm)
  • -Reel®
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4866
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates

What is IRS2003PBF

Infineon Technologies Part Number IRS2003PBFPMIC - Gate Drivers), developed and manufactured by Infineon Technologies, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

IRS2003PBF is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

IRS2003PBF Specifications

  • Part NumberIRS2003PBF
  • CategoryPMIC - Gate Drivers
  • ManufacturerInfineon Technologies
  • DescriptionIC GATE DRVR HALF-BRIDGE 8DIP
  • Package-Reel®
  • Series-
  • Voltage - Supply10V ~ 20V
  • Operating Temperature-40°C ~ 150°C (TJ)
  • Mounting TypeThrough Hole
  • Package / Case8-DIP (0.300\", 7.62mm)
  • Supplier Device Package8-PDIP
  • Input TypeInverting, Non-Inverting
  • Channel TypeIndependent
  • Rise / Fall Time (Typ)70ns, 35ns
  • Driven ConfigurationHalf-Bridge
  • Number of Drivers2
  • Gate TypeIGBT, N-Channel MOSFET
  • Logic Voltage - VIL, VIH0.8V, 2.5V
  • Current - Peak Output (Source, Sink)290mA, 600mA
  • High Side Voltage - Max (Bootstrap)200 V

Application of IRS2003PBF

Gate Drivers have been widely used in various fields of power electronics technology. In the motor control system, the gate driver is used to drive the MOSFET or IGBT switching components of the inverter to achieve accurate control and efficient operation of the motor, which is widely used in the fields of electric vehicles, industrial automation equipment and household appliances. In power inverters, the gate driver is responsible for converting DC power to AC power to meet the needs of various loads, commonly seen in solar photovoltaic systems, wind power systems and uninterruptible power supplies (UPS). In addition, gate drivers also play an important role in many fields such as switching power supplies, AC frequency converters, and power electronic converters.

IRS2003PBF Datasheet

IRS2003PBF Datasheet , -Reel®,10V ~ 20V,-40°C ~ 150°C (TJ),Through Hole,8-DIP (0.300\", 7.62mm),8-PDIP,Inverting, Non-Inverting,Independent,70ns, 35ns,Half-Bridge,2,IGBT, N-Channel MOSFET,0.8V, 2.5V,290mA, 600mA,200 V

IRS2003PBF Classification

PMIC - Gate Drivers

Gate Drivers are circuits specifically designed to enhance and control the gate signals of a MOSFET or IGBT. It receives low-voltage and low-current signals from the controller and converts them into high-voltage and high-current pulse signals that directly act on the gate of the MOSFET or IGBT, thus achieving accurate control of these semiconductor switching devices. Grid drivers have become an indispensable part of modern power electronic systems because of their high efficiency in signal conversion and stable driving performance.

FAQ about PMIC - Gate Drivers

  • 1. How to choose a gate driver for a MOSFET?

    When selecting a gate driver for a MOSFET, the following key factors need to be considered:
    Current drive capability: The current drive capability of the gate driver directly affects the turn-on and turn-off speed of the MOSFET. Higher current sinking and sourcing capabilities mean faster turn-on and turn-off speeds, thereby reducing switching losses.
    Fault detection function: The gate driver should have fault detection functions such as undervoltage lockout (UVLO), desaturation (DESAT) detection, etc. to ensure the safety and stable operation of the system.
    Interference immunity: Common mode transient immunity (CMTI) is an important parameter to measure the anti-interference ability of the gate driver. In high-power systems, high CMTI values ​​can better resist voltage transients and ensure stable operation of the system.
    Electrical isolation: Electrically isolated gate drivers can achieve electrical isolation between control signals and power devices to ensure system safety. Optical coupling isolation and magnetic coupling isolation are common electrical isolation technologies, and the selection should be compared according to application requirements.
    Switching frequency: For high-frequency switching applications, the switching frequency of the gate driver should match the switching frequency of the MOSFET to ensure efficient operation.
    Transmission delay: Transmission delay and transmission delay matching are important parameters of electrical isolation drivers, which affect the response speed of the signal and the stability of the system.

  • 2. What is a motor gate driver?

    A motor gate driver is a circuit that is mainly used to enhance the gate signal of a field effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT) so that the controller can better control the operation of these semiconductor switches. It converts the low-voltage signal output by the controller into a high-voltage, high-current pulse signal to ensure that the MOSFET or IGBT can switch states stably and quickly within its operating range.

  • 3. What is the difference between MOSFET and IGBT gate drivers?

    The gate drivers of MOSFET and IGBT have significant differences in drive voltage, drive current, and drive mode.
    Drive Voltage and Drive Current
    MOSFET: The gate drive voltage of MOSFET is low, usually between 10V and 20V. Due to its structural characteristics, the driving current of MOSFET is also relatively small, which is suitable for using a smaller driving circuit.
    IGBT: The gate driving voltage of IGBT is relatively high, usually between 15V and 20V. Due to its composite structure, IGBT requires a large driving current to control its conduction and cutoff, and usually requires a special driving circuit to provide sufficient driving power.
    Driving method
    MOSFET: The switching speed of MOSFET is very fast and suitable for high-frequency applications. Its driving method is relatively simple, and the gate can be directly controlled by voltage to achieve fast switching action.
    IGBT: The switching speed of IGBT is slow and suitable for low-frequency applications. Due to its composite structure, IGBT requires a larger driving current and a more complex driving circuit to ensure its stable operation. IGBT usually requires positive and negative voltages to control its conduction and cutoff, especially when it is turned off, a negative voltage is required to eliminate the current tailing effect.

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Infineon Technologies
Infineon Technologies
Founded on April 1, 1999, Infineon Technologies is a leading global semiconductor company and one of the largest semiconductor product manufacturers in Germany. The company is headquartered in Munich, Germany, and its predecessor was the...
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