ON Semiconductor MMBT6517LT1G
- MMBT6517LT1G
- ON Semiconductor
- TRANS NPN 350V 0.1A SOT23
- Transistors - Bipolar (BJT) - Single
- MMBT6517LT1G Datasheet
- TO-236-3, SC-59, SOT-23-3
- Tube
- Lead free / RoHS Compliant
- 2455
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number MMBT6517LT1G |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer ON Semiconductor |
Description TRANS NPN 350V 0.1A SOT23 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23-3 (TO-236) |
Power - Max 225 mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 100 mA |
Voltage - Collector Emitter Breakdown (Max) 350 V |
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA |
Current - Collector Cutoff (Max) 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA, 10V |
Frequency - Transition 200MHz |
Package_case TO-236-3, SC-59, SOT-23-3 |
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