MMDT3904-7

Diodes Incorporated MMDT3904-7

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  • MMDT3904-7
  • Diodes Incorporated
  • TRANS 2NPN 40V 0.2A SOT363
  • Transistors - Bipolar (BJT) - Arrays
  • MMDT3904-7 Datasheet
  • 6-TSSOP, SC-88, SOT-363
  • -Reel®
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2820
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
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What is MMDT3904-7

Diodes Incorporated Part Number MMDT3904-7（Transistors - Bipolar (BJT) - Arrays）, developed and manufactured by Diodes Incorporated, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

MMDT3904-7 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

MMDT3904-7 Specifications

  • Part NumberMMDT3904-7
  • CategoryTransistors - Bipolar (BJT) - Arrays
  • ManufacturerDiodes Incorporated
  • DescriptionTRANS 2NPN 40V 0.2A SOT363
  • Package-Reel®
  • Series-
  • Operating Temperature-55°C ~ 150°C (TJ)
  • Mounting TypeSurface Mount
  • Package / Case6-TSSOP, SC-88, SOT-363
  • Supplier Device PackageSOT-363
  • Power - Max200mW
  • Transistor Type2 NPN (Dual)
  • Current - Collector (Ic) (Max)200mA
  • Voltage - Collector Emitter Breakdown (Max)40V
  • Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max)50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
  • Frequency - Transition300MHz

Application of MMDT3904-7

Bipolar (BJT) -Arrays are widely used in many fields. In the communication system, BJT-array can be used for RF amplification, signal modulation and demodulation, power amplification and other key links to improve the communication quality and transmission efficiency. In the field of automotive electronics, it is an important part of the engine control unit, body control module and other core components to achieve accurate control and optimization of vehicle systems. In addition, BJT-array is also widely used in industrial control, medical equipment, consumer electronics and other fields, such as the sensor interface circuit on the industrial automation production line, the signal amplification and processing circuit of medical equipment, the power management and drive circuit of household appliances.

MMDT3904-7 Datasheet

MMDT3904-7 Datasheet , -Reel®,-55°C ~ 150°C (TJ),Surface Mount,6-TSSOP, SC-88, SOT-363,SOT-363,200mW,2 NPN (Dual),200mA,40V,300mV @ 5mA, 50mA,50nA (ICBO),100 @ 10mA, 1V,300MHz

MMDT3904-7 Classification

Transistors - Bipolar (BJT) - Arrays

Bipolar (BJT) -Arrays is a circuit module that consists of multiple Bipolar Junction transistors (BJT) integrated together. This array design provides high power processing capabilities while maintaining good thermal management and control characteristics. BJT arrays typically include multiple NPN or PNP transistors that can be connected in series, parallel, or in combination to meet specific current and voltage requirements.

FAQ about Transistors - Bipolar (BJT) - Arrays

  • 1. What advantages do BJT arrays offer over single transistors?

    BJT arrays provide better matching between transistors, reduce PCB space, and improve thermal performance since all transistors share the same substrate.

  • 2. Are there specific applications for dual BJT arrays?

    Dual BJT arrays are commonly used in push-pull amplifier stages, LED drivers, or signal switching circuits.

  • 3. How do BJT arrays compare to MOSFET arrays?

    BJT arrays are preferred for applications requiring high current gain and faster switching, while MOSFETs are better for low-power and high-efficiency applications.

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Do you have any questions about MMDT3904-7 ?
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+86-755-28503874
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
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Diodes Incorporated
Diodes Incorporated
Diodes Incorporated was founded in 1968 in the United States, with its headquarters located in Plano, Texas and Milpitas, California. It is a S&P small cap 600 and Russell 3000 index company, as well as...
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