MSRT200160(A)

GeneSiC Semiconductor MSRT200160(A)

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  • MSRT200160(A)
  • GeneSiC Semiconductor
  • DIODE MODULE 1.6KV 200A 3TOWER
  • Diodes - Rectifiers - Arrays
  • MSRT200160(A) Datasheet
  • Three Tower
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 23212
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
MSRT200160(A)
Category
Diodes - Rectifiers - Arrays
Manufacturer
GeneSiC Semiconductor
Description
DIODE MODULE 1.6KV 200A 3TOWER
Package
Bulk
Series
-
Mounting Type
Chassis Mount
Package / Case
Three Tower
Supplier Device Package
Three Tower
Diode Type
Standard
Voltage - Forward (Vf) (Max) @ If
1.2 V @ 200 A
Current - Reverse Leakage @ Vr
10 µA @ 600 V
Diode Configuration
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)
1600 V
Current - Average Rectified (Io) (per Diode)
200A (DC)
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Operating Temperature - Junction
-
Package_case
Three Tower

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