NTE Electronics, Inc NTE30
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- NTE30
- NTE Electronics, Inc
- TRANS PNP 80V 50A TO3
- Transistors - Bipolar (BJT) - Single
- NTE30 Datasheet
- TO-204AA, TO-3
- Bag
-
Lead free / RoHS Compliant - 1875
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
What is NTE30
NTE Electronics, Inc Part Number NTE30（Transistors - Bipolar (BJT) - Single）, developed and manufactured by NTE Electronics, Inc, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
NTE30 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
NTE30 Specifications
- Part NumberNTE30
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerNTE Electronics, Inc
- DescriptionTRANS PNP 80V 50A TO3
- PackageBag
- Series-
- Operating Temperature-65°C ~ 200°C (TJ)
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Supplier Device PackageTO-3
- Power - Max300 W
- Transistor TypePNP
- Current - Collector (Ic) (Max)50 A
- Voltage - Collector Emitter Breakdown (Max)80 V
- Vce Saturation (Max) @ Ib, Ic5V @ 10A, 50A
- Current - Collector Cutoff (Max)1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 25A, 2V
- Frequency - Transition2MHz
Application of NTE30
NTE30 Datasheet
NTE30 Datasheet , Bag,-65°C ~ 200°C (TJ),Through Hole,TO-204AA, TO-3,TO-3,300 W,PNP,50 A,80 V,5V @ 10A, 50A,1mA,15 @ 25A, 2V,2MHz
NTE30 Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is a bipolar transistor?
A bipolar transistor, or bipolar junction transistor (BJT), is an electronic device with three terminals, consisting of three semiconductors with different doping levels. It was successfully developed by William Shockley, John Bardeen and Walter Brattain of Bell Labs in 1947, marking the birth of semiconductor device technology.
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2. What is the difference between bipolar transistors and CMOS transistors?
The main differences between bipolar transistors and CMOS transistors are in working principles, structures, application scenarios, and power consumption.
Working principle
Bipolar transistor: Bipolar transistors have two types of carriers (holes and electrons) involved in conduction, and they are made of three parts of semiconductors with different doping levels. In bipolar transistors, the emitter emits free electrons, the collector receives holes, and the base controls the on and off of the current.
CMOS transistor: CMOS transistors have only one type of carrier (electrons or holes) involved in conduction, usually using a combination of P-type semiconductors and N-type semiconductors. In CMOS transistors, when the gate voltage is zero, the current does not flow. Only when the gate voltage reaches a certain value, the current will flow, which makes the CMOS transistor consume almost no power when static.
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3. Are bipolar transistors still in use?
Bipolar transistors are still in use and play an important role in many fields. Bipolar transistors, the full name of which is bipolar junction transistor (BJT), commonly known as triode, are electronic devices with three terminals, made of three parts of semiconductors with different doping levels. Its working principle involves the flow of two carriers, electrons and holes, so it is called bipolar.
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