NTE Electronics, Inc NTE61MCP
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- NTE61MCP
- NTE Electronics, Inc
- TRANS PNP 140V 20A TO3
- Transistors - Bipolar (BJT) - Single
- NTE61MCP Datasheet
- TO-204AA, TO-3
- Bag
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Lead free / RoHS Compliant - 3897
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
What is NTE61MCP
NTE Electronics, Inc Part Number NTE61MCP（Transistors - Bipolar (BJT) - Single）, developed and manufactured by NTE Electronics, Inc, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
NTE61MCP is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
NTE61MCP Specifications
- Part NumberNTE61MCP
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerNTE Electronics, Inc
- DescriptionTRANS PNP 140V 20A TO3
- PackageBag
- Series-
- Operating Temperature-65°C ~ 200°C (TJ)
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Supplier Device PackageTO-3
- Power - Max250 W
- Transistor TypePNP
- Current - Collector (Ic) (Max)20 A
- Voltage - Collector Emitter Breakdown (Max)140 V
- Vce Saturation (Max) @ Ib, Ic1V @ 500mA, 5A
- Current - Collector Cutoff (Max)250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 5A, 2V
- Frequency - Transition2MHz
Application of NTE61MCP
NTE61MCP Datasheet
NTE61MCP Datasheet , Bag,-65°C ~ 200°C (TJ),Through Hole,TO-204AA, TO-3,TO-3,250 W,PNP,20 A,140 V,1V @ 500mA, 5A,250µA,25 @ 5A, 2V,2MHz
NTE61MCP Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. Is BJT bipolar or unipolar?
BJT (bipolar junction transistor) is bipolar. BJT (bipolar junction transistor) is composed of two N-type semiconductors sandwiched between a P-type semiconductor, with an emitter junction formed between the emitter and the base, and a collector junction formed between the collector and the base. When the power is turned on, the majority carriers (electrons) in the emitter and the majority carriers (holes) in the base diffuse with each other, forming a current amplification effect.
The working principle of BJT is to achieve current amplification through the control of two PN junctions (emitter junction and collector junction). When the emitter junction is forward biased, electrons are injected from the emitter region into the base region; when the collector junction is reverse biased, electrons are injected from the base region into the collector region. Because the base region is very thin and the impurity content is strictly controlled, most electrons can enter the collector region through the collector junction to form the collector current Ic, and only a small number of electrons recombine with holes in the base region to form the base current Ib. Therefore, by controlling the base current Ib, the collector current Ic can be amplified to achieve current amplification. -
2. Is PNP transistor bipolar?
PNP transistor is a bipolar transistor. PNP transistor is a bipolar transistor used in electronic circuits to amplify, switch and control current. Its name "PNP" represents the three different semiconductor regions in its structure: two positive poles (P type) and one negative pole (N type).
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3. Are bipolar transistors still in use?
Bipolar transistors are still in use and play an important role in many fields. Bipolar transistors, the full name of which is bipolar junction transistor (BJT), commonly known as triode, are electronic devices with three terminals, made of three parts of semiconductors with different doping levels. Its working principle involves the flow of two carriers, electrons and holes, so it is called bipolar.
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