PHT11N06LT,135

NXP USA Inc. PHT11N06LT,135

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  • PHT11N06LT,135
  • NXP USA Inc.
  • MOSFET N-CH 55V 4.9A SOT223
  • Transistors - FETs, MOSFETs - Single
  • PHT11N06LT,135 Datasheet
  • TO-261-4, TO-261AA
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 20014
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PHT11N06LT,135
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 55V 4.9A SOT223
Package
Tape & Reel (TR)
Series
TrenchMOS™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
SC-73
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.8W (Ta), 8.3W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
4.9A (Ta)
Rds On (Max) @ Id, Vgs
40mOhm @ 5A, 5V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 25 V
Vgs (Max)
±13V
Drive Voltage (Max Rds On, Min Rds On)
5V
Package_case
TO-261-4, TO-261AA

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NXP USA Inc.
NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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