NXP USA Inc. PMSTA3904,115
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- PMSTA3904,115
- NXP USA Inc.
- TRANS NPN 40V 200A SOT323-3
- Transistors - Bipolar (BJT) - Single
- PMSTA3904,115 Datasheet
- SC-70, SOT-323
- Bulk
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Lead free / RoHS Compliant - 22674
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What is PMSTA3904,115
NXP USA Inc. Part Number PMSTA3904,115（Transistors - Bipolar (BJT) - Single）, developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
PMSTA3904,115 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
PMSTA3904,115 Specifications
- Part NumberPMSTA3904,115
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerNXP USA Inc.
- DescriptionTRANS NPN 40V 200A SOT323-3
- PackageBulk
- Series-
- Operating Temperature150°C (TJ)
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Supplier Device PackageSC-70
- Power - Max200 mW
- Transistor TypeNPN
- Current - Collector (Ic) (Max)200 mA
- Voltage - Collector Emitter Breakdown (Max)40 V
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
- Frequency - Transition300MHz
Application of PMSTA3904,115
PMSTA3904,115 Datasheet
PMSTA3904,115 Datasheet , Bulk,150°C (TJ),Surface Mount,SC-70, SOT-323,SC-70,200 mW,NPN,200 mA,40 V,300mV @ 5mA, 50mA,50nA (ICBO),100 @ 10mA, 1V,300MHz
PMSTA3904,115 Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is a bipolar transistor?
A bipolar transistor, or bipolar junction transistor (BJT), is an electronic device with three terminals, consisting of three semiconductors with different doping levels. It was successfully developed by William Shockley, John Bardeen and Walter Brattain of Bell Labs in 1947, marking the birth of semiconductor device technology.
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2. Are bipolar transistors still in use?
Bipolar transistors are still in use and play an important role in many fields. Bipolar transistors, the full name of which is bipolar junction transistor (BJT), commonly known as triode, are electronic devices with three terminals, made of three parts of semiconductors with different doping levels. Its working principle involves the flow of two carriers, electrons and holes, so it is called bipolar.
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3. Is BJT transistor a bipolar device?
BJT transistor is a bipolar junction transistor (Bipolar Junction Transistor, referred to as BJT), which is a bipolar device. BJT is composed of two PN junctions, divided into PNP and NPN types, and works through two PN junctions to achieve current amplification.
The working principle of BJT is to amplify the collector current by controlling the base current. When the base potential is higher than the emitter potential, the emitter junction is in a forward biased state, and the collector junction is in a reverse biased state. Since the majority carrier concentration in the emitter region is greater than that in the base region, most of the electrons injected into the base region pass over the collector junction and enter the collector region, forming a collector current, thereby achieving current amplification.
BJT is widely used in electronic circuits, such as amplifiers, switches, oscillators, etc., with amplification capabilities, linear amplification characteristics and high frequency response.
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